il250/ 251/ 252/ ild250/ 251/ 252 document number 83618 rev. 1.4, 07-dec-04 vishay semiconductors www.vishay.com 1 i179024 1 2 3 6 5 4 b c e nc a/c c/a 1 2 3 4 8 7 6 5 e c c e a a c c single channel dual channel pb p b -free e3 optocoupler, phototransistor output, ac input, with base connection features ? ac or polarity insensitive input built-in reverse polarity input protection improved ctr symmetry industry standard dip package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa 93751 bsi iec60950 iec60065 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 applications ideal for ac signal detection and monitoring. description the il250/ 251/ 252/ ild250/ 251/ 252 are bidirec- tional input optically coupled isolators consisting of two gallium arsenide infrared leds coupled to a sili- con npn phototransistor per channel. the il250/ ild/250 has a minimum ctr of 50 %, the il251/ ild251 has a minimum ctr of 20 %, and the il252/ ild252 has a minimum ctr of 100 %. the il250/ il251/ il252 are single channel optocou- plers. the ild250/ ild251/ ild252 has two isolated channels in a single dip package. order information for additional information on t he available options refer to option information. part remarks il250 ctr > 50 %, single channel dip-6 il251 ctr > 20 %, single channel dip-6 il252 ctr > 100 %, single channel dip-6 ild250 ctr > 50 %, dual channel dip-8 ild251 ctr > 20 %, dual channel dip-8 ild252 ctr > 100 %, dual channel dip-8 IL250-X007 ctr > 50 %, single channel smd-6 (option 7) il250-x009 ctr > 50 %, single channel smd-6 (option 9) il251-x009 ctr > 20 %, single channel smd-6 (option 9) il252-x007 ctr > 100 %, single channel smd-6 (option 7) il252-x009 ctr > 100 %, single channel smd-6 (option 9) ild250-x009 ctr > 50 %, dual channel smd-6 (option 9) ild251-x006 ctr > 20 %, dual channel dip-8 400 mil (option 6) ild251-x007 ctr > 20 %, dual channel smd-6 (option 7) ild251-x009 ctr > 20 %, dual channel smd-6 (option 9) ild252-x009 ctr > 100 %, dual channel smd-6 (option 9)
www.vishay.com 2 document number 83618 rev. 1.4, 07-dec-04 il250/ 251/ 252/ ild250/ 251/ 252 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 30 v emitter-base breakdown voltage bv ebo 5.0 v collector-base breakdown voltage bv cbo 70 v power dissipati on single channel p diss 200 mw power dissipation dual channel p diss 150 mw derate linearly from 25 c single channel 2.6 mw/c derate linearly from 25 c dual channel 2.0 mw/c parameter test condition symbol value unit isolation test voltage (between emitter and detector referred to standard climate 23 c/50 %rh, din 50014) v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? total dissipation single channel p tot 250 mw total dissipation dual channel p tot 400 mw derate linearly from 25 c single channel 3.3 mw/c derate linearly from 25 c dual channel 5.3 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 sec.
il250/ 251/ 252/ ild250/ 251/ 252 document number 83618 rev. 1.4, 07-dec-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.2 1.5 v parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 ma bv ceo 30 50 v emitter-base breakdown voltage i e = 100 abv ebo 7.0 10 v collector-base breakdown voltage i c = 10 abv cbo 70 90 v collector-emitter leakage current v ce = 10 v i ceo 5.0 50 na parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i f = 16 ma, i c = 2.0 ma v cesat 0.4 v parameter test condition part symbol min ty p. max unit dc current transfer ratio i f = 10 ma, v ce = 10 v il250/ild250 ctr dc 50 % il251/ild251 ctr dc 20 % il252/ild252 ctr dc 100 % symmetry (ctr @ + 10 ma)/ (ctr @ -10 ma) 0.50 1.0 2.0 figure 1. led forward current vs.forward voltage iil250_01 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 -60 -40 -20 0 20 40 60 25c -55c 85c v f - led forward voltage - v i f - led forward current - ma figure 2. normalized non-saturated and saturated ctr vs. led current iil250_02 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v
www.vishay.com 4 document number 83618 rev. 1.4, 07-dec-04 il250/ 251/ 252/ ild250/ 251/ 252 vishay semiconductors figure 3. normalized non-saturated and saturated ctr vs. led current figure 4. normalized non-saturated and saturated ctr vs. led current figure 5. normalized non-saturated and saturated ctr vs. led current iil250_03 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr normalized to: v ce =10v,i f = 10 ma, t a = 25c t a = 50c ctrce(sat) v ce = 0.4 v iil250_04 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr(sat) nctr normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v t a = 70c nctr - normalized ctr iil250_05 .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr nctr(sat) nctr normalized to: v ce =10v , i f =10ma, t a = 25c ctrce(sat) v ce = 0.4 v t a = 85c figure 6. collector-emitter current vs. temperature and led current figure 7. collector-emitter leakage current vs.temp. figure 8. normalized ctr cb vs. led current and temperature iil250_06 60 50 30 20 10 0 0 5 10 15 20 25 30 35 50c 70c 85c i f - led current - ma i ce - collector current - ma 25c 40 iil250_07 100 80 60 40 20 0 -20 t a - ambient temperature - c i ceo - collector-emitter - na typical v ce =10v 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 iil250_08 .1 1 1 0 100 0.0 0.5 1.0 1.5 25c 50c 70c i f - led current - ma nctr cb - normalized ctr cb normalized to: i f =10 ma v cb =9.3v t a = 25c
il250/ 251/ 252/ ild250/ 251/ 252 document number 83618 rev. 1.4, 07-dec-04 vishay semiconductors www.vishay.com 5 figure 9. collector-base phot ocurrent vs. led current figure 10. normalized photocurrent vs. i f and temp. figure 11. normalized non-saturated hfe vs. base current and temperature iil250_09 100 10 1 .1 .01 .1 1 10 100 1000 if - led current - ma i cb - collector base photocurrent - a i cb = 1.0357 *if ^1.3631 t a = 25c iil250_10 .1 1 10 100 10 1 .1 .01 i f - led current - ma normalized photocurrent normalized to: i f = 10 ma, t = 25c nib- t a = -20c nib, t a = 25c nib, t a = 50c nib, t a = 70c iil250_11 1000 0.4 0.6 0.8 1.0 1.2 i b - base current - a nhfe - normalized hfe -20c 25c 50c 70c normalized to: i b =20 a v ce =10v t a = 25c 110100 figure 12. normalized saturated hfe vs. base current and temperature figure 13. propagation delay vs. collector load resistor figure 14. switching timing iil250_12 1 1 0 100 1000 0.0 0.5 1.0 1.5 i b - base current - ( a) v ce = 0.4 v normalized to: v ce =10v i b =20 a t a = 25c 70c 50c 25c -20c nhfe(sat) -normalized saturated hfe iil250_13 r l - collector load resistor - k ? 100 10 1 .1 1 10 100 1000 1.0 1.5 2.0 2.5 tplh tphl tplh - propagation delay s tphl - propagation delay s t a = 25c, i f =10ma v cc = 5 v, vth = 1.5 v iil250_14 i f t r v o t d t s t f t phl t plh v th = 1.5 v
www.vishay.com 6 document number 83618 rev. 1.4, 07-dec-04 il250/ 251/ 252/ ild250/ 251/ 252 vishay semiconductors package dimensions in inches (mm) iil250_15 v o v cc =5v r l i f =10 ma f=10 khz, df=50% figure 15. switching schematic i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a
il250/ 251/ 252/ ild250/ 251/ 252 document number 83618 rev. 1.4, 07-dec-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
www.vishay.com 8 document number 83618 rev. 1.4, 07-dec-04 il250/ 251/ 252/ ild250/ 251/ 252 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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